A photoelectric device can be either intrinsic or extrinsic. An intrinsic semiconductor has its own charge carriers and is not an efficient semiconductor, for example, silicon. In intrinsic devices the only available electrons are in the valence band, and hence the photon must have enough energy to excite the electron across the entire bandgap.
Coated with epoxy
Good spectrum characteristic
Standard Type and Specifications
|Specification||Type||Maximum Voltage||Maximum power||Spectrumpeak value||Light resistance(10Lux)(KΩ)||Dark resistance(MΩ)||Response time(ms)|
|φ10 series||GL10516||200||200||560||5- 10||1||30||30|
Lead sulfide (PbS) and indium antimonide (InSb) LDRs (light-dependent resistors) are used for the mid-infrared spectral region.
1. What is the test condition?
Light resistance Irradiate by 400-600Lux light for two hours, then test with 10Lux under standard light source A(as colour temperature 2856K)
Dark resistance Refer to the resistance value ten seconds after the 10Lux light is shut up.
Free samples are available for testing.
Light dependent resistors, LDRs or photoresistors are often used in circuits where it is necessary to detect the presence or the level of light. They can be described by a variety of names from light dependent resistor, LDR, photoresistor, or even photo cell, photocell or photoconductor.View More
A photoresistor is made of a high resistance semiconductor. In the dark, a photoresistor can have a resistance as high as several megohms (MΩ), while in the light, a photoresistor can have a resistance as low as a few hundred ohms.View More
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