Overview
A photoelectric device can be either intrinsic or extrinsic. An intrinsic semiconductor has its own charge carriers and is not an efficient semiconductor, for example, silicon. In intrinsic devices the only available electrons are in the valence band, and hence the photon must have enough energy to excite the electron across the entire bandgap.
Feature
Coated with epoxy
Good reliability
Small volume
Good spectrum characteristic
Standard Type and Specifications
Specification | Type | Maximum Voltage | Maximum power | Spectrum peak value | Light resistance (10Lux) (KΩ) | Dark resistance (MΩ) | Response time (ms) | |
Increase | Decrease | |||||||
φ10 series | GL10516 | 200 | 200 | 560 | 5- 10 | 1 | 30 | 30 |
GL10528 | 200 | 200 | 560 | 10- 20 | 2 | 30 | 30 | |
GL10537-1 | 200 | 200 | 560 | 20- 30 | 3 | 30 | 30 | |
GL10537-2 | 200 | 200 | 560 | 30- 50 | 5 | 30 | 30 | |
GL10539 | 200 | 200 | 560 | 50- 100 | 8 | 30 | 30 | |
Applications
Lead sulfide (PbS) and indium antimonide (InSb) LDRs (light-dependent resistors) are used for the mid-infrared spectral region.
FAQ
1. What is the test condition?
Light resistance Irradiate by 400-600Lux light for two hours, then test with 10Lux under standard light source A(as colour temperature 2856K)
Dark resistance Refer to the resistance value ten seconds after the 10Lux light is shut up.
2. Samples.
Free samples are available for testing.
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